sup/sub60n06-18 vishay siliconix document number: 70290 s57253erev. d, 24-feb-98 www.vishay.com faxback 408-970-5600 2-1 n-channel 60-v (d-s), 175 c mosfet v (br)dss (v) r ds(on) ( ) i d (a) 60 0.018 60 d g s n-channel mosfet sup60n06-18 sub60n06-18 drain connected to tab to-220ab top view gds to-263 s g top view d
parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d 60 a continuous drain current (t j = 175 c) t c = 100 c i d 39 a pulsed drain current i dm 120 a avalanche current i ar 60 repetitive avalanche energy a l = 0.1 mh e ar 180 mj power dissipation t c = 25 c (to-220ab and to-263) p d 120 b w power dissipation t a = 25 c (to-263) c p d 3.7 w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit junction to ambient pcb mount (to-263) c r hja 40 c/w junction-to-ambient free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 1.25 notes: a. duty cycle 1%. b. see soa curve for voltage derating. c. when mounted on 1o square pcb (fr-4 material). for spice model information via the worldwide web: http://www.vishay.com/www/product/spice.htm
sup/sub60n06-18 vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70290 s57253erev. d, 24-feb-98
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